This file goals at explaining why (sections 1-4) we're ended in reflect on heavily the duality method of powerful interactions, either from analogy with an analogous method of the speculation of nuclear reactions, and as a potential means out of the disagreeable deadlock into which quantum relativistic theories of sturdy interactions appear to be pressured. subsequent we will speak about how (sections 5-6) we move approximately discovering options to the restrictions of a twin conception and what their homes are. ultimately, a few rules can be provided touching on the place (section 7) all this may convey us within the close to destiny.
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Additional resources for An introduction to dual models of strong interaction and their physical motivations
W. L. Sprung, M. Girlanda, and M. Macucci and also on our results published in Refs. 3 and 4 and further developed in the course of QUADRANT. 5 We focus on methods to determine the depletion under a stripe gate. 6 We then move on to the description of the Configuration-Interaction approach that we have used for the numerical simulation of a complete cell, and present its application to the analysis of the effects of fabrication tolerances. We introduce a cell layout that allows correction of the geometrical asymmetries by properly tuning the bias voltages applied to the gates and discuss how such a layout can be useful for the demonstration of the QCA principle, but cannot be applied to the realization of large-scale circuits.
Macucci no lateral branching is possible, because the space above and below the cell is occupied by the leads needed to bias the individual gates. 14 Furthermore, the adjustment of the gate voltages required to symmetrize a cell can be performed on a circuit containing just a few cells, but is unthinkable for a large array of cells. In particular, we must consider that the tuning of one cell also depends on the bias voltages applied to the neighboring cells, as will be discussed more in detail at the end of the present chapter.
Be mainly that of shifting the polarization curves along the horizontal axis. Therefore, the value for which the polarization of the driven cell changes sign moves from its zero value corresponding to a perfectly symmetric cell. We have defined the amount of this shift P s w and we have reported it as a 22 M. Macucci and M. Governale Driver cell polarization Fig. 3. Polarization of the driven cell Pi versus the polarization of the driver cell P2, as a function of the driver cell asymmetry for a SOI QCA.